Improvement of kesterite solar cell performance by solution synthesized MoO sub(3) interfacial layer

In this study, an ultra-thin MoO sub(3) layer synthesized by a solution-based technique is introduced as a promising interfacial layer to improve the performance of kesterite Cu sub(2)ZnSnSe sub(4) (CZTSe) solar cell. Solar cells with 10nm of MoO sub(3) between Mo rear contact and CZTSe had larger m...

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Published inPhysica status solidi. A, Applications and materials science Vol. 214; no. 1; p. np
Main Authors Ranjbar, Samaneh, Brammertz, Guy, Vermang, Bart, Hadipour, Afshin, Cong, Shuren, Suganuma, Katsuaki, Schnabel, Thomas, Meuris, Marc, da Cunha, AF, Poortmans, Jef
Format Journal Article
LanguageEnglish
Published 01.01.2017
Subjects
Contact
Efficiency
Electric potential
Minority carriers
Photovoltaic cells
Solar cells
Synthesis
Voltage
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Summary:In this study, an ultra-thin MoO sub(3) layer synthesized by a solution-based technique is introduced as a promising interfacial layer to improve the performance of kesterite Cu sub(2)ZnSnSe sub(4) (CZTSe) solar cell. Solar cells with 10nm of MoO sub(3) between Mo rear contact and CZTSe had larger minority carrier life time and open-circuit voltage compared to the reference solar cells. Temperature dependent current density-voltage measurement indicated that the activation energy (E sub(A)) of the main recombination is higher (837 meV) in solar cells with MoO sub(3) layer, as compared to conventional solar cells where E sub(A)770meV, indicating reduced interface recombination. A best efficiency of 7.1% was achieved for a SLG/Mo/MoO sub(3)/CZTSe/CdS/TCO solar cell compared to the reference solar cell SLG/Mo/CZTSe/CdS/TCO for which 5.9% efficiency was achieved.
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ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201600534