Selective growth of ZnTe on sapphire substrates using a SiO sub(2) mask

ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO sub(2)-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (...

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Published inPhysica Status Solidi. B: Basic Solid State Physics Vol. 253; no. 11; pp. 2265 - 2269
Main Authors Nakasu, Taizo, Hattori, Shota, Sun, Wei-Che, Kobayashi, Masakazu
Format Journal Article
LanguageEnglish
Published 01.11.2016
Subjects
Flux
Masks
Molecular beam epitaxy
Sapphire
Silicon dioxide
Solid state physics
Substrates
Zinc tellurides
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Summary:ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO sub(2)-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 degree C), low growth rate (0.3 mu mh super(-1)), and low J sub(Te)/J sub(Zn) flux ratio (0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO sub(2) mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO sub(2).
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ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201600317