Imprinting of Local Metallic States into VO sub(2) with Ultraviolet Light
Materials exhibiting electronic phase transitions have attracted widespread attention. By switching between metallic and insulating states under external stimuli, the accompanying changes in the electrical and optical properties can be harnessed in novel electronic and optical applications. In this...
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Published in | Advanced functional materials Vol. 26; no. 36; pp. 6612 - 6618 |
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Main Authors | , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.09.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Materials exhibiting electronic phase transitions have attracted widespread attention. By switching between metallic and insulating states under external stimuli, the accompanying changes in the electrical and optical properties can be harnessed in novel electronic and optical applications. In this work, a laterally confined conductive pattern is inscribed into an otherwise insulating VO sub(2) thin film using ultraviolet light, inducing an almost four orders of magnitude decrease in electrical resistivity of the exposed area. The metallic imprint remains in VO sub(2) after ultraviolet light exposure and can be completely erased by a short low temperature anneal. The ability to optically pattern confined metallic structures provides new opportunities for reconfigurable photonic and plasmonic structures, as well as re-writable electric circuitry. A laterally confined conductive pattern is inscribed into an otherwise insulating VO sub(2) matrix using ultraviolet light, with almost four orders of magnitude decrease in electrical resistivity. The conductive pattern is persistent and can be completely erased by a short annealing. Optical patterning of locally confined metallic structures provides new opportunities in photonics, plasmonics and electronics, such as reconfigurable bottom electrode. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-2 |
ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.201601890 |