Band alignment and defect states in amorphous GaInZnO thin films grown on SiO sub(2)/Si substrates

The band alignment and defect states of GaInZnO thin films grown on SiO sub(2)/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo-electron emission and photo-induced curr...

Full description

Saved in:
Bibliographic Details
Published inSurface and interface analysis Vol. 48; no. 10; pp. 1062 - 1065
Main Authors Heo, Sung, Chung, JaeGwan, Lee, Jae Cheol, Song, Taewon, Kim, Seong Heon, Yun, Dong-Jin, Lee, Hyung Ik, Kim, KiHong, Park, Gyeong Su, Oh, Jong Soo, Kwak, Dong Wook, Lee, DongWha, Cho, Hoon Young, Tahi, Dahlang, Kang, Hee Jae, Choi, Byoung-Deog
Format Journal Article
LanguageEnglish
Published 01.10.2016
Subjects
Alignment
Band spectra
Defects
Electron energy loss spectroscopy
Radio frequencies
Reflection
Silicon dioxide
Thin films
Online AccessGet full text

Cover

More Information
Summary:The band alignment and defect states of GaInZnO thin films grown on SiO sub(2)/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo-electron emission and photo-induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2eV. The defect states via photo-induced current transient spectroscopy and thermally stimulated exo-electron emission were at 0.24, 0.53, 1.69 and 2.01eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53eV are related to the field-effect mobility, and the defect stated at 1.69 and 2.01eV is related to the oxygen vacancy defect.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-2
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.6024