Ferroelectric BaSrTiO sub(3) films structured by an intermediate annealing during the deposition

(Ba,Sr)TiO sub(3) layered thin films were grown by radio-frequency magnetron sputtering of a ceramic target on Pt/Ti-buffered sapphire substrate. The structural and microwave properties of the films were improved by an intermediate annealing of the layers during the growing process. Ferroelectric tu...

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Bibliographic Details
Published inIntegrated ferroelectrics Vol. 173; no. 1; pp. 38 - 45
Main Authors Tumarkin, A, Razumov, S, Odinets, A, Gagarin, A, Altynnikov, A, Kozyrev, A
Format Journal Article
LanguageEnglish
Published 23.07.2016
Subjects
Annealing
Ceramics
Deposition
Dielectrics
Ferroelectric materials
Ferroelectricity
Microwaves
Thin films
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Summary:(Ba,Sr)TiO sub(3) layered thin films were grown by radio-frequency magnetron sputtering of a ceramic target on Pt/Ti-buffered sapphire substrate. The structural and microwave properties of the films were improved by an intermediate annealing of the layers during the growing process. Ferroelectric tunable capacitors based on these films show a tunability n = 83% at electric field strength of 80 V/ mu m, an absence of the capacitance slow relaxation up to 40 V/ mu m and the dielectric losses not higher than 4% at frequency of 2 GHz. These values represent substantial improvements when compared to conventionally grown tunable dielectric films.
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ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2016.1183987