Device simulation of CH sub(3)NH sub(3)PbI sub(3 ) perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n-type a-Si:H/p-type mu c-Si sub(1-x)O sub(x):H tunnel junction

• Published in: Physica status solidi. A, Applications and materials science Vol. 213; no. 7; pp. 1997 - 2002
• Main Authors: Nakanishi, Akira, Takiguchi, Yuki, Miyajima, Shinsuke
• Format: Journal Article
• Language: English
• Published: 01.07.2016
• Subjects: Crystal structure; Heterojunctions; Offsets; Perovskites; Photovoltaic cells; Simulation; Solar cells; Tunnels (transportation)
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201532946

We investigate perovskite/heterojunction crystalline silicon monolithic tandem solar cells by using device simulation. A hydrogenated amorphous and microcrystalline silicon-based tunnel recombination junction is applied to the tandem solar cells. The influence of the conduction and valence band offset between the n-type layer of the perovskite top cell and the tunnel recombination junction was investigated. To obtain excellent solar cell performance, the conduction band offset should be 0-0.6eV, although the valence band offset does not affect the solar cell performance. We also found that higher fill factor is expected when the n-type layer of the perovskite top cell is located on the tunnel recombination junction compared with the structure in which the hole conductor is located on the tunnel recombination junction.