Thermoelectric properties of n-type half-Heusler compounds (Hf0.25Zr0.75)1-x Nb x NiSn

A series of Nb doped (Hf0.25Zr0.75)1-x Nb x NiSn (x = 0-0.03) samples were synthesized and studied by arc-melting the elements to first form ingots, then ball-milling the ingots to obtain fine powders, and finally hot-pressing the fine powder to form bulk samples. Instead of the conventional Sb dopi...

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Bibliographic Details
Published inActa materialia Vol. 113; pp. 41 - 47
Main Authors Zhang, Hao, Wang, Yumei, Dahal, Keshab, Mao, Jun, Huang, Lihong, Zhang, Qinyong, Ren, Zhifeng
Format Journal Article
LanguageEnglish
Published 01.07.2016
Subjects
Antimony
Computational efficiency
Computing time
Dopants
Doping
Ingots
Mathematical analysis
Thermoelectricity
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Summary:A series of Nb doped (Hf0.25Zr0.75)1-x Nb x NiSn (x = 0-0.03) samples were synthesized and studied by arc-melting the elements to first form ingots, then ball-milling the ingots to obtain fine powders, and finally hot-pressing the fine powder to form bulk samples. Instead of the conventional Sb doping on the Sn site of the n-type half-Heusler, it was found that Nb is also an effective dopant. When the carrier concentration is optimized at 2.2% Nb, a power factor of 47 mu W cm-1 K-2 is achieved at and above 600 degree C, and a peak ZT 0.9 is achieved at 700 degree C with Nb doping from 1.8 at% to 2.2 at%. An output power density of 22 W cm-2 and a leg efficiency of 12% are calculated for the Nb doped samples.
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ISSN:1359-6454
DOI:10.1016/j.actamat.2016.04.039