Toward the Atomically Abrupt Interfaces of SiO sub(x)/Semiconductor Junctions
A novel simple method to produce a high-quality interface between semiconductor (e.g., Ge or III-V) and dielectric film (i.e., SiO sub(2)) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T greater than or equal to 300 degree C, leading to semiconductor reduction a...
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Published in | Advanced materials interfaces Vol. 3; no. 11; p. np |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.06.2016
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Abstract | A novel simple method to produce a high-quality interface between semiconductor (e.g., Ge or III-V) and dielectric film (i.e., SiO sub(2)) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T greater than or equal to 300 degree C, leading to semiconductor reduction and dielectric film growth. As a result, the formed interface is atomically abrupt and has a low density of defect gap states. |
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AbstractList | A novel simple method to produce a high-quality interface between semiconductor (e.g., Ge or III-V) and dielectric film (i.e., SiO sub(2)) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T greater than or equal to 300 degree C, leading to semiconductor reduction and dielectric film growth. As a result, the formed interface is atomically abrupt and has a low density of defect gap states. |
Author | Punkkinen, Risto Lastusaari, Mika Korpijaervi, Ville-Markus Guina, Mircea Yasir, Muhammad Kuzmin, Mikhail Maekelae, Jaakko Laukkanen, Pekka Dahl, Johnny Polojaervi, Ville Hedman, Hannu-Pekka Moon, Jongyun Punkkinen, Marko PJ Tuominen, Marjukka Kokko, Kalevi |
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SubjectTerms | Defects Density Dielectrics Film growth Reduction Semiconductor junctions Semiconductors Silicon dioxide |
Title | Toward the Atomically Abrupt Interfaces of SiO sub(x)/Semiconductor Junctions |
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