Toward the Atomically Abrupt Interfaces of SiO sub(x)/Semiconductor Junctions
A novel simple method to produce a high-quality interface between semiconductor (e.g., Ge or III-V) and dielectric film (i.e., SiO sub(2)) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T greater than or equal to 300 degree C, leading to semiconductor reduction a...
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Published in | Advanced materials interfaces Vol. 3; no. 11; p. np |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.06.2016
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Subjects | |
Online Access | Get full text |
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Summary: | A novel simple method to produce a high-quality interface between semiconductor (e.g., Ge or III-V) and dielectric film (i.e., SiO sub(2)) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T greater than or equal to 300 degree C, leading to semiconductor reduction and dielectric film growth. As a result, the formed interface is atomically abrupt and has a low density of defect gap states. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-2 |
ISSN: | 2196-7350 2196-7350 |
DOI: | 10.1002/admi.201500510 |