Toward the Atomically Abrupt Interfaces of SiO sub(x)/Semiconductor Junctions

A novel simple method to produce a high-quality interface between semiconductor (e.g., Ge or III-V) and dielectric film (i.e., SiO sub(2)) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T greater than or equal to 300 degree C, leading to semiconductor reduction a...

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Published inAdvanced materials interfaces Vol. 3; no. 11; p. np
Main Authors Kuzmin, Mikhail, Laukkanen, Pekka, Maekelae, Jaakko, Yasir, Muhammad, Tuominen, Marjukka, Dahl, Johnny, Punkkinen, Marko PJ, Kokko, Kalevi, Hedman, Hannu-Pekka, Moon, Jongyun, Punkkinen, Risto, Lastusaari, Mika, Polojaervi, Ville, Korpijaervi, Ville-Markus, Guina, Mircea
Format Journal Article
LanguageEnglish
Published 01.06.2016
Subjects
Defects
Density
Dielectrics
Film growth
Reduction
Semiconductor junctions
Semiconductors
Silicon dioxide
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Summary:A novel simple method to produce a high-quality interface between semiconductor (e.g., Ge or III-V) and dielectric film (i.e., SiO sub(2)) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T greater than or equal to 300 degree C, leading to semiconductor reduction and dielectric film growth. As a result, the formed interface is atomically abrupt and has a low density of defect gap states.
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SourceType-Scholarly Journals-1
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ISSN:2196-7350
2196-7350
DOI:10.1002/admi.201500510