High performance MoS sub(2)-based field-effect transistor enabled by hydrazine doping

We investigated the n-type doping effect of hydrazine on the electrical characteristics of a molybdenum disulphide (MoS sub(2))-based field-effect transistor (FET). The threshold voltage of the MoS sub(2) FET shifted towards more negative values (from -20 to -70 V) on treating with 100% hydrazine so...

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Bibliographic Details
Published inNanotechnology Vol. 27; no. 22; pp. 225201 - 225206
Main Authors Lim, Dongsuk, Kannan, E S, Lee, Inyeal, Rathi, Servin, Li, Lijun, Lee, Yoontae, Khan, Muhammad Atif, Kang, Moonshik, Park, Jinwoo, Kim, Gil-Ho
Format Journal Article
LanguageEnglish
Published 01.06.2016
Subjects
Channels
Doping
Electrodes
Field effect transistors
Hydrazines
Molybdenum disulfide
Semiconductor devices
Threshold voltage
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Summary:We investigated the n-type doping effect of hydrazine on the electrical characteristics of a molybdenum disulphide (MoS sub(2))-based field-effect transistor (FET). The threshold voltage of the MoS sub(2) FET shifted towards more negative values (from -20 to -70 V) on treating with 100% hydrazine solution with the channel current increasing from 0.5 to 25 mu A at zero gate bias. The inverse subthreshold slope decreased sharply on doping, while the ON/OFF ratio increased by a factor of 100. Gate-channel coupling improved with doping, which facilitates the reduction of channel length between the source and drain electrodes without compromising on the transistor performance, making the MoS sub(2)-based FET easily scalable.
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/27/22/225201