Modeling the 3D In profile of In sub(x)Ga sub(1-x)As/GaAs quantum dots

An iterative procedure, based on the finite-elements method combined with a stochastic approach, was developed to calculate the energy levels of In sub( x)Ga sub(1-x)As/GaAs quantum dots grown by molecular-beam epitaxy. The vertical and radial In-composition profiles resulting from segregation and i...

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 49; no. 21; pp. 215101 - 215111
Main Authors Tanaka, R Y, Abe, N M, da Silva, E C F, Quivy, A A, Passaro, A
Format Journal Article
LanguageEnglish
Published 01.06.2016
Subjects
Compatibility
Energy levels
Finite element method
Mathematical analysis
Molecular beam epitaxy
Quantum dots
Segregations
Three dimensional models
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Summary:An iterative procedure, based on the finite-elements method combined with a stochastic approach, was developed to calculate the energy levels of In sub( x)Ga sub(1-x)As/GaAs quantum dots grown by molecular-beam epitaxy. The vertical and radial In-composition profiles resulting from segregation and intermixing effects were taken into account. Two In profiles suggested in the literature were tested and compared to optical and structural data. One of them was shown to be compatible with the experimental data.
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ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/49/21/215101