High mobility field effect transistor of SnO sub(x) on glass using HfO sub(x) gate oxide

• Published in: Current applied physics Vol. 16; no. 3; pp. 300 - 304
• Main Authors: Ju, Chanjong, Park, Chulkwon, Yang, Hyeonseok, Kim, Useong, Kim, Young Mo, Char, Kookrin
• Format: Journal Article
• Language: English
• Published: 01.03.2016
• Subjects: Electrical properties; Field effect transistors; Gates; Glass; Oxides; Partial pressure; Semiconductor devices; Substrates
• ISSN: 1567-1739
• DOI: 10.1016/j.cap.2015.12.015

We report on the electrical properties of SnO sub(x) thin films made by reactive sputtering of a Sn metal target and the performance of their field effect transistors with HfO sub(x) gate insulator on glass substrates. We investigated the electrical properties of SnO sub(x) films by controlling the oxygen partial pressure during growth. The mobility of the SnO sub(x) films on glass substrates was as high as 20.28 cm super(2) V super(-1) s super(-1) after post-deposition annealing at 400 degree C, while its carrier density was 4.21 10 super(18) cm super(-3). Moreover, we fabricated high mobility thin film transistors using polycrystalline SnO sub(x) as the channel and the atomic-layer-deposited HfO sub(x) as the gate oxide. The field-effect mobility values were 5.01-20.15 cm super(2) V super(-1) s super(-1), the I sub(on)/I sub(off) were 10 super(3) similar to 10 super(4), and the subthreshold swing were 1.05-1.60 V dec super(-1). We discuss the origins for the non-ideal performance and the future direction for improvement.