Comparison of interfacial and electrical properties between Al sub(2) O sub(3) and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric

GaAs metal-oxide-semiconductor (MOS) capacitors with HfTiO as the gate dielectric and Al sub(2) O sub(3) or ZnO as the interface passivation layer (IPL) are fabricated. X-ray photoelectron spectroscopy reveals that the Al sub(2) O sub(3) IPL is more effective in suppressing the formation of native o...

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Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 3
Main Authors Zhu, Shuyan, Xu, Jingping, Wang, Lisheng, Huang, Yuan, Tang, Wing Man
Format Journal Article
LanguageEnglish
Published 01.03.2015
Subjects
Density
Devices
Electrical properties
Gallium arsenide
Gates
Passivation
Semiconductors
Zinc oxide
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Summary:GaAs metal-oxide-semiconductor (MOS) capacitors with HfTiO as the gate dielectric and Al sub(2) O sub(3) or ZnO as the interface passivation layer (IPL) are fabricated. X-ray photoelectron spectroscopy reveals that the Al sub(2) O sub(3) IPL is more effective in suppressing the formation of native oxides and As diffusion than the ZnO IPL. Consequently, experimental results show that the device with Al sub(2) O sub(3) IPL exhibits better interfacial and electrical properties than the device with ZnO IPL: lower interface-state density (7.2 x 10 super(12) eV super(-1) cm super(-2)), lower leakage current density (3.60 x 10 super(-7) A/cm super(2) at V sub(g)= 1 V) and good C-V behavior.
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/3/034006