Novel high-kpolymers as dielectric layers for organic thin-film transistors

In this paper, we report the design, synthesis, and dielectric properties of novel high-kand cross-linked polymer dielectric films used in low-threshold-voltage organic thin-film transistors (OTFTs). The novel polymer films are readily fabricated by spin coating followed by curing at 160 degree C. T...

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Published inPolymer chemistry Vol. 6; no. 37; pp. 6651 - 6658
Main Authors Li, Yao, Wang, He, Shi, Zuosen, Mei, Jingjing, Wang, Xuesong, Yan, Donghang, Cui, Zhanchen
Format Journal Article
LanguageEnglish
Published 01.09.2015
Subjects
Curing
Dielectric constant
Dielectric properties
Dielectrics
Polymeric films
Semiconductor devices
Spin coating
Thin film transistors
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Summary:In this paper, we report the design, synthesis, and dielectric properties of novel high-kand cross-linked polymer dielectric films used in low-threshold-voltage organic thin-film transistors (OTFTs). The novel polymer films are readily fabricated by spin coating followed by curing at 160 degree C. These films exhibit excellent insulating properties, smooth surface, and high dielectric constants (7.2 and 6.8, respectively). The bottom-gate top-contact para-sexiphenyl (p-6P)/vanadyl-phthalocyanine (VOPc) OTFTs with these polymer films as the dielectric layer exhibit excellent performance in terms of threshold voltages (-3 and +3 V, respectively), charge carrier mobilities (0.8 and 0.5 cm super(2) V super(-1) s super(-1), respectively), on/off current ratio >10 super(4), and ultralow leakage.
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ISSN:1759-9954
1759-9962
DOI:10.1039/c5py00891c