Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon ( mu c-Si:H) used in thin-film silicon tandem solar cells. This process aim...

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Published inEnergies (Basel) Vol. 9; no. 1; p. 42
Main Authors Hishida, Mitsuoki, Sekimoto, Takeyuki, Matsumoto, Mitsuhiro, Terakawa, Akira
Format Journal Article
LanguageEnglish
Published 01.01.2016
Subjects
Chemical vapor deposition
Conversion
Crystal defects
Crystallinity
Photovoltaic cells
Silicon
Solar cells
Very high frequencies
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Summary:Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon ( mu c-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc) of mu c-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD.
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ISSN:1996-1073
DOI:10.3390/en9010042(registeringDOI)