MOCVD of TiO sub(2) thin films from a modified titanium alkoxide precursor

• Published in: Physica status solidi. A, Applications and materials science Vol. 212; no. 7; pp. 1563 - 1570
• Main Authors: Kim, Sun Ja, Dang, Van-Son, Xu, Ke, Barreca, Davide, Maccato, Chiara, Carraro, Giorgio, Bhakta, Raghunandan K, Winter, Manuela, Becker, Hans-Werner, Rogalla, Detlef, Sada, Cinzia, Fischer, Roland A, Devi, Anjana
• Format: Journal Article
• Language: English
• Published: 01.07.2015
• Subjects: Alkoxides; Atomic force microscopy; Precursors; Secondary ion mass spectrometry; Thin films; Titanium; Titanium dioxide; X-ray photoelectron spectroscopy; X-rays
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201532271

A new titanium precursor, [Ti(OPr super(i) sub(2)(deacam) sub(2)] (deacam=N,N-diethylacetoacetamide ), was developed by the reaction of the parent Ti alkoxide with the [beta]-ketoamide. The compound, obtained as a monomeric six-coordinated complex, was used in metal organic chemical vapor deposition (MOCVD) of TiO sub(2) both as a single source precursor (SSP) and in the presence of oxygen. The high thermal stability of [Ti(OPr super(i) sub(2) (deacam) sub(2)] enabled the fabrication of TiO sub(2) films over a wide temperature range, with steady growth rates between 500 and 800 degree C. The microstructure of the obtained systems was analyzed by X-ray diffraction (XRD) and Raman spectroscopy, whereas atomic force microscopy (AFM) and field emission-scanning electron microscopy (FE-SEM) measurements were performed to investigate the surface morphology and nanoorganization. Film composition was investigated by complementary techniques like Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS). The electrical properties of the layers were investigated by performing capacitance voltage (C-V) and leakage current measurements.