Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a...

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Bibliographic Details
Published inMaterials Vol. 9; no. 1; p. 46
Main Authors Fan, Ching-Lin, Lin, Wei-Chun, Chang, Hsiang-Sheng, Lin, Yu-Zuo, Huang, Bohr-Ran
Format Journal Article
LanguageEnglish
Published 01.01.2016
Subjects
Channels
Drains
Electrodes
Interlayers
Pentacene
Performance enhancement
Semiconductor devices
Thin film transistors
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Summary:In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.
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ISSN:1996-1944
DOI:10.3390/ma9010046(registeringDOI)