Magnetotransport properties of Mn A s/ Z n S n A s sub(2)/ Z n S n A s sub(2): M n ferromagnet/semiconductor hybrid structures

We have successfully grown MnAs/ZnSnAs sub(2)/ZnSnAs sub(2): Mn trilayer heterostructures on InP(001) substrates by molecular beam epitaxy. The magnetization curve showed small double steps due to the difference in coercive force between the ferromagnetic MnAs and ZnSnAs sub(2):Mn layers. The curren...

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Published inPhysica status solidi. A, Applications and materials science Vol. 210; no. 7; pp. 1336 - 1339
Main Authors Oomae, Hiroto, Jinbo, Yoshio, Toyota, Hideyuki, Uchitomi, Naotaka
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
Ferromagnetism
Giant magnetoresistance
Magnetic properties
Magnetization
Magnetoresistivity
Manganese
Molecular beam epitaxy
Semiconductors
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Summary:We have successfully grown MnAs/ZnSnAs sub(2)/ZnSnAs sub(2): Mn trilayer heterostructures on InP(001) substrates by molecular beam epitaxy. The magnetization curve showed small double steps due to the difference in coercive force between the ferromagnetic MnAs and ZnSnAs sub(2):Mn layers. The current-in-plane giant magnetoresistance was clearly observed in magnetoresistance (MR) measurements in current-in-plane geometry. The MR ratio was found to be two times higher than that of single MnAs layer. This enhanced MR ratio can be ascribed to the GMR behavior in the trilayers, resulting from the change of the magnetization of the two ferromagnetic layers between parallel and antiparallel configuration. The temperature dependence of MR ratios also differ between the samples of trilayer and MnAs single layer.
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ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201200829