Structural and Electrical Characterization of Bi sub(2)Se sub(3) Nanostructures Grown by Metal-Organic Chemical Vapor Deposition

We characterize nanostructures of Bi sub(2)Se sub(3) that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 mu m long or thin micrometer-sized platele...

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Bibliographic Details
Published inNano letters Vol. 12; no. 9; pp. 4711 - 4714-4711-4714
Main Authors Alegria, L D, Schroer, MD, Chatterjee, A, Poirier, G R, Pretko, M, Patel, S K, Petta, J R
Format Journal Article
LanguageEnglish
Published 02.09.2012
Subjects
Bismuth
Chemical vapor deposition
Electrical properties
Electrical resistivity
Nanostructure
Phase coherence
Physical vapor deposition
Precursors
Tapes (metallic)
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Summary:We characterize nanostructures of Bi sub(2)Se sub(3) that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 mu m long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 m Omega .cm. We observe weak antilocalization and extract a phase coherence length l sub() = 178 nm and spin-orbit length l sub(so) = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl302108r