Relaxation phenomena in a naturally disordered Pb sub(3)O sub(4) semiconductor

Charge transfer in Pb sub(3)O sub(4) structures has been investigated. Electric current dependences on time at temperatures of 300-370 K and at the dc electric field strength in the range of 2 times 10 super(5)-9 times 10 super(5) V/m were measured. Flowing of relaxation polarizing current is shown...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 586; pp. 1 - 6
Main Authors Sevryugina, M P, Pshchelko, N S, Kadi, Ya S
Format Journal Article
LanguageEnglish
Published 01.01.2015
Subjects
Charge
Charge transfer
Electric charge
Electric field strength
Polarization
Regularity
Semiconductors
Surface area
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Summary:Charge transfer in Pb sub(3)O sub(4) structures has been investigated. Electric current dependences on time at temperatures of 300-370 K and at the dc electric field strength in the range of 2 times 10 super(5)-9 times 10 super(5) V/m were measured. Flowing of relaxation polarizing current is shown to result in charge accumulation in the sample surface area. Experimental regularities coordinate with provisions of the relay mechanism of transfer of a charge with the participation of deep local levels. Values of the charge transfer parameters were determined.
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ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/586/1/012016