Pt/Ta sub(2)O sub(5)/HfO sub(2-x)/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Pt/Ta sub(2)O sub(5)/HfO sub(2-x)/ Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resista...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 27; no. 25; pp. 3811 - 3816
Main Authors Yoon, Jung Ho, Kim, Kyung Min, Song, Seul Ji, Seok, Jun Yeong, Yoon, Kyung Jean, Kwon, Dae Eun, Park, Tae Hyung, Kwon, Young Jae, Shao, Xinglong, Hwang, Cheol Seong
Format Journal Article
LanguageEnglish
Published 01.07.2015
Subjects
Circuit design
Hafnium oxide
Multilevel
Platinum
Switching
Tantalum oxides
Titanium
Wire
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Summary:Pt/Ta sub(2)O sub(5)/HfO sub(2-x)/ Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.
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SourceType-Scholarly Journals-1
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ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201501167