Low-temperature heteroepitaxial growth of InAlAs layers on ZnSnAs sub(2)/InP(001)

We studied the epitaxial growth of InAlAs on ZnSnAs sub(2) thin films to establish magnetic heterostructures involving ferromagnetic Mn-doped ZnSnAs sub(2) (ZnSnAs sub(2):Mn) thin films. These heterostructures were successfully grown at temperatures around 300 degree C to maintain room-temperature f...

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Published inPhysica status solidi. C Vol. 12; no. 6; pp. 516 - 519
Main Authors Oomae, Hiroto, Suzuki, Akiko, Toyota, Hideyuki, Nakamura, Shin'ichi, Uchitomi, Naotaka
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
Diffraction
Epitaxial growth
Ferromagnetic materials
Heterostructures
Multilayers
Reflection
Solid state physics
Thin films
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Summary:We studied the epitaxial growth of InAlAs on ZnSnAs sub(2) thin films to establish magnetic heterostructures involving ferromagnetic Mn-doped ZnSnAs sub(2) (ZnSnAs sub(2):Mn) thin films. These heterostructures were successfully grown at temperatures around 300 degree C to maintain room-temperature ferromagnetism in ZnSnAs sub(2):Mn. Reflection high-energy electron diffraction, X-ray diffraction measurements and cross-sectional transmission electron microscopy revealed that the InAlAs layers were pseudomorphically lattice-matched with ZnSnAs sub(2,) even at the low temperature of 300 degree C. We attempted to prepare magnetic quantum well structures from the InAlAs/ZnSnAs sub(2):Mn magnetic multilayer structure. We found that InAlAs layers heteroepitaxially grown on ZnSnAs sub(2) and ferromagnetic ZnSnAs sub(2):Mn films are suitable for preparing InP-based magnetic semiconductor quantum structures. ( copyright 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201400246