Low Power and Improved Switching Properties of Selector-Less Ta sub(2)O sub(5) Based Resistive Random Access Memory Using Ti-Rich TiN Electrode

The effects of TiN top electrode composition (TiN vs Ti-rich TiN) on the resistive switching characteristics of selector-less TiN/TiO sub(x)/Ta sub(2)O sub(5)/TiN resistive random access memory (ReRAM) are investigated. Ti-rich TiN enables TiO sub(x) to have a higher concentration of oxygen vacancy...

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Published inJapanese Journal of Applied Physics Vol. 52; no. 4S; p. 04CD05
Main Authors Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Format Journal Article
LanguageEnglish
Published 01.04.2013
Subjects
Concentration (composition)
Electrodes
Filaments
Random access memory
Switching
Tantalum oxides
Tin
Titanium
Titanium oxides
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Summary:The effects of TiN top electrode composition (TiN vs Ti-rich TiN) on the resistive switching characteristics of selector-less TiN/TiO sub(x)/Ta sub(2)O sub(5)/TiN resistive random access memory (ReRAM) are investigated. Ti-rich TiN enables TiO sub(x) to have a higher concentration of oxygen vacancy and reduce barrier height between top electrode and TiO sub(x). This leads to higher on/off current ratio and lower operation voltage without degradation of non-linearity which is the important factor for selector-less type ReRAM, compared to the stoichiometric TiN resistor stack. Consequently, it is verified that the switching mechanism is hybrid combination of filament formation and redox reaction in switching operation. This work is applicable to both high density and cost-effective ReRAM.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.04CD05