Optically transparent thin-film transistors based on 2D multilayer MoS sub(2) and indium zinc oxide electrodes

• Published in: Nanotechnology Vol. 26; no. 3; pp. 1 - 5
• Main Authors: Kwon, Junyeon, Hong, Young Ki, Kwon, Hyuk-Jun, Park, Yu Jin, Yoo, Byungwook, Kim, Jiwan, Grigoropoulos, Costas P, Oh, Min Suk, Kim, Sunkook
• Format: Journal Article
• Language: English
• Published: 23.01.2015
• Subjects: Channels; Electrodes; Indium; Indium tin oxide; Molybdenum disulfide; Semiconductor devices; Thin film transistors; Zinc oxide
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/26/3/035202

We report on optically transparent thin film transistors (TFTs) fabricated using multilayered molybdenum disulfide (MoS sub(2)) as the active channel, indium tin oxide (ITO) for the back-gated electrode and indium zinc oxide (IZO) for the source/drain electrodes, respectively, which showed more than 81% transmittance in the visible wavelength. In spite of a relatively large Schottky barrier between MoS sub(2) and IZO, the n-type behavior with a field-effect mobility ( mu sub(eff)) of 1.4 cm super(2) V super(-1) s super(-1) was observed in as-fabricated transparent MoS sub(2) TFT. In order to enhance the performances of transparent MoS sub(2) TFTs, a picosecond pulsed laser was selectively irradiated onto the contact region of the IZO electrodes. Following laser annealing, mu sub(eff) increased to 4.5 cm super(2) V super(-1) s super(-1), and the on-off current ratio (I sub(on)/I sub(off)) increased to 10 super(4), which were attributed to the reduction of the contact resistance between MoS sub(2) and IZO.