High concentration of nitrogen doped into graphene using N sub(2) plasma with an aluminum oxide buffer layer

We performed plasma doping of nitrogen into single-layer graphene on SiO sub(2). Using aluminum oxide as a buffer layer to reduce the plasma damage, up to 19.7% nitrogen was substitutionally doped into graphene. The nitrogen doping of graphene was confirmed by Raman and X-ray photoemission spectrosc...

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Bibliographic Details
Published inJournal of materials chemistry. C, Materials for optical and electronic devices Vol. 2; no. 5; pp. 933 - 939
Main Authors Park, Sang Han, Chae, Jimin, Cho, Mann-Ho, Kim, Joo Hyoung, Yoo, Kyung-Hwa, Cho, Sang Wan, Kim, Tae Gun, Kim, Jeong Won
Format Journal Article
LanguageEnglish
Published 01.01.2014
Subjects
Aluminum oxide
Buffer layers
Doping
Graphene
Mathematical analysis
Photoelectron spectroscopy
UPS
X-rays
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Summary:We performed plasma doping of nitrogen into single-layer graphene on SiO sub(2). Using aluminum oxide as a buffer layer to reduce the plasma damage, up to 19.7% nitrogen was substitutionally doped into graphene. The nitrogen doping of graphene was confirmed by Raman and X-ray photoemission spectroscopy analyses. The n-doping property of the N-doped graphene was measured by Raman spectroscopy. Raman mapping was carried out to statistically confirm the Dirac cone shift of graphene resulting from the N-doping. The Dirac cone shift was directly measured by ultraviolet photoemission spectroscopy (UPS). The UPS result was consistent with the value calculated from the Raman G peak shift.
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ISSN:2050-7526
2050-7534
DOI:10.1039/c3tc31773k