Dependence on an oxide trapas location of random telegraph noise (RTN) in GIDL current of n-MOSFET

We investigated the variation of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current by changing location of a trap inside the gate oxide of n type metal-oxide semiconductor field effect transistor (n-MOSFET). The dependence on drain to gate bias was then considered. This appro...

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Bibliographic Details
Published inSolid-state electronics Vol. 92; pp. 20 - 23
Main Authors Gia, Quan, Yoo, Sung-Won, Lee, Hyunseul, Shin, Hyungcheol
Format Journal Article
LanguageEnglish
Published 01.02.2014
Subjects
Drains
Gates
Metal oxide semiconductors
Metal oxides
Noise
Oxides
Position (location)
Semiconductors
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Summary:We investigated the variation of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current by changing location of a trap inside the gate oxide of n type metal-oxide semiconductor field effect transistor (n-MOSFET). The dependence on drain to gate bias was then considered. This approach has been assessed with Technology Computer Aided Designed (TCAD) simulations.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-2
ISSN:0038-1101
DOI:10.1016/j.sse.2013.10.018