CW Lasing at 1.35 m From Ten InAsaSba:aGaAs Quantum-Dot Layers Grown by Metal-Organic Chemical Vapor Deposition

We report the fabrication of GaAs-based quantum-dot (QD) lasers grown by metal-organic chemical vapor deposition (MOCVD) above 1.3 m. We fabricated a laser diode with ten stacked InAs-Sb:GaAs(100) QD layers, grown by antimony-surfactant-mediated growth. Ground-state lasing was obtained under continu...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 20; no. 10
Main Authors Guimard, D, Ishida, M, Hatori, N, Nakata, Y, Sudo, H, Yamamoto, T, Sugawara, M, Arakawa, Y
Format Journal Article
LanguageEnglish
Published 01.01.2008
Subjects
Chemical vapor deposition
Gain
Ground state
Laser diodes
Lasers
Lasing
Photonics
Quantum dots
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Summary:We report the fabrication of GaAs-based quantum-dot (QD) lasers grown by metal-organic chemical vapor deposition (MOCVD) above 1.3 m. We fabricated a laser diode with ten stacked InAs-Sb:GaAs(100) QD layers, grown by antimony-surfactant-mediated growth. Ground-state lasing was obtained under continuous-wave operation at room temperature at 1.35 mum, with a maximum ground state modal gain of 19.3 cm super(-1). These values are the highest values reported for MOCVD-grown GaAs-based QD laser.
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ISSN:1041-1135
DOI:10.1109/LPT.2008.921831