Thermoluminescence properties of isostructural K2YF5 and K2GdF5 crystals doped with Tb3+ in response to a, b and X-ray irradiation
The thermoluminescence (TL) properties of isostructural fluoride K2YF5 and K2GdF5 crystals doped with Tb3+ of different concentrations have been studied in the temperature range from 30 to 500AC after a, b and X-ray irradiation. Strongly different structures of TL glow curves following a or b irradi...
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Published in | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 268; no. 20; pp. 3344 - 3350 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
15.10.2010
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Subjects | |
Online Access | Get full text |
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Summary: | The thermoluminescence (TL) properties of isostructural fluoride K2YF5 and K2GdF5 crystals doped with Tb3+ of different concentrations have been studied in the temperature range from 30 to 500AC after a, b and X-ray irradiation. Strongly different structures of TL glow curves following a or b irradiation have been found for Tb3+ doped K2YF5 for all studied concentrations of Tb3+ whereas for K2GdF5 crystals the different TL curves after a or b irradiation are detected only for heavily doped samples. On the other hand, all the studied materials show similar TL glow curves after b or X-ray irradiation. It has been discovered that K2YF5 doped with 1 at.% Tb3+ has TL radiation sensitivity to b irradiation of the same order as that of the well known TLD-100 (LiF:Mg,Ti) phosphor and much higher sensitivity to a irradiation. The TL mechanism in K2YF5 and K2GdF5 doped with Tb3+ is discussed by taking into account the TL emission spectra from irradiated samples, which are identical to the emission spectra of the Tb3+ ions in these hosts under photo-excitation, and the kinetics parameters obtained with the method of various heating rates. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-2 |
ISSN: | 0168-583X |
DOI: | 10.1016/j.nimb.2010.06.041 |