High performance Delta W-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts

Ge nanowires (NWs) about 2 mu m long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH4 as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evap...

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Bibliographic Details
Published inNanotechnology Vol. 21; no. 43; p. 435704
Main Author Burchhart, T
Format Journal Article
LanguageEnglish
Published 29.10.2010
Subjects
Channels
Copper
Drains
Germanium
MOSFETs
Nanocomposites
Nanomaterials
Nanowires
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Summary:Ge nanowires (NWs) about 2 mu m long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH4 as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu3Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga + implantation leading to a high performance Delta *W-gated Ge-NW MOSFET with saturation currents of a few microamperes.
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ISSN:0957-4484
DOI:10.1088/0957-4484/21/43/435704