Comparison of electrical and reliability characteristics of different 14 Aa oxynitride gate dielectrics

A comparison of RTNO, N sub(2)O and N sub(2)O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Aa is explored. The N sub(2)O-ISSG oxynitride gate dielectric film demonstrates good interface proper...

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Bibliographic Details
Published inIEEE electron device letters Vol. 23; no. 7
Main Authors Pan, Tung-Ming, Lin, Hsiu-Shan, Chen, Main-Gwo, Liu, Chuan-Hsi, Chang, Yih-Jau
Format Journal Article
LanguageEnglish
Published 01.01.2002
Subjects
Devices
Dielectrics
Gates
Integrated circuits
Ion nitriding
Nitrous oxides
Oxides
Oxynitrides
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Summary:A comparison of RTNO, N sub(2)O and N sub(2)O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Aa is explored. The N sub(2)O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices
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SourceType-Scholarly Journals-1
content type line 23
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ISSN:0741-3106
DOI:10.1109/LED.2002.1015223