On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO sub( 2) /p-Si (MIS) structures

• Published in: Physica. B, Condensed matter Vol. 406; no. 4; pp. 771 - 776
• Main Authors: Pakma, O, Serin, N, Serin, T, Altindal, S
• Format: Journal Article
• Language: English
• Published: 15.02.2011
• Subjects: Aluminum; Bias; Condensed matter; Density; Energy distribution; Management information systems; Silicon; Titanium dioxide; Volt-ampere characteristics
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2010.11.078

The energy distribution profile of the interface states (N sub(ss)) of Al/TiO sub(2)/p-Si (MIS) structures prepared using the sol-gel method was obtained from the forward bias current-voltage (I-V) characteristics by taking into account both the bias dependence of the effective barrier height ([inline image] sub(e)) and series resistance (R sub(s)) at room temperature. The main electrical parameters of the MIS structure such as ideality factor (n), zero-bias barrier height ([inline image] sub(b0)) and average series resistance values were found to be 1.69, 0.519 eV and 659 [Omega], respectively. This high value of n was attributed to the presence of an interfacial insulator layer at the Al/p-Si interface and the density of interface states (N sub(ss)) localized at the Si/TiO sub(2) interface. The values of N sub(ss) localized at the Si/TiO sub(2) interface were found with and without the R sub(s) at 0.25-E sub(v) in the range between 8.4x10 super(13) and 4.9x10 super(13) eV super(-1) cm super(-2). In addition, the frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G/[Omega]-V) characteristics of the structures have been investigated by taking into account the effect of N sub(ss) and R sub(s) at room temperature. It can be found out that the measured C and G/[Omega] are strongly dependent on bias voltage and frequency.