High mobility C sub( 60) organic field-effect transistors

Organic field-effect transistors, incorporating the electron transport material C sub( 60) as the active semiconductor, have been fabricated under high vacuum conditions and tested in a nitrogen atmosphere at ambient pressure. The maximum field-effect mobility was found to be 0.65 cm super( 2)/Vs, c...

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Bibliographic Details
Published inElectronics letters Vol. 41; no. 7; p. 1
Main Authors Haddock, N J, Domercq, B, Kippelen, B
Format Journal Article
LanguageEnglish
Published 01.03.2005
Subjects
Barometric pressure
Electron transport
Field effect transistors
High vacuum
Pressure
Semiconductor devices
Semiconductors
State of the art
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Summary:Organic field-effect transistors, incorporating the electron transport material C sub( 60) as the active semiconductor, have been fabricated under high vacuum conditions and tested in a nitrogen atmosphere at ambient pressure. The maximum field-effect mobility was found to be 0.65 cm super( 2)/Vs, comparable to the state-of-the-art value measured under ultra-high-vacuum conditions
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0013-5194
1350-911X