InP/GaAsSb type-II DHBTs with f sub( T)>350 GHz

Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak f sub( T) of 358 GHz. The device consists of a 0.35 8 mu m emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BV sub( CEO) > 4 V an...

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Bibliographic Details
Published inElectronics letters Vol. 40; no. 20; p. 1
Main Authors Chu-Kung, B F, Feng, M
Format Journal Article
LanguageEnglish
Published 01.09.2004
Subjects
Accumulators
Collectors
Emitters (electron)
Gain
Heterojunction bipolar transistors
Indium phosphides
Semiconductor devices
State of the art
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Summary:Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak f sub( T) of 358 GHz. The device consists of a 0.35 8 mu m emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BV sub( CEO) > 4 V and a maximum DC current gain ( beta ) of 19. The peak RF operating collector current density exceeds 900 kA/cm super( 2).
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ObjectType-Feature-2
ISSN:0013-5194
1350-911X