Raman emission in porous silicon at 1.54 mu m
There have been many reports regarding visible luminescence and light emission at 1.54 mu m, at room temperature, from porous silicon and from Er-doped porous silicon, respectively. A different approach, based on Raman scattering in porous silicon, is described to generate radiation at 1.54 mu m. Th...
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Published in | Electronics letters Vol. 40; no. 19; p. 1 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.09.2004
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Subjects | |
Online Access | Get full text |
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Summary: | There have been many reports regarding visible luminescence and light emission at 1.54 mu m, at room temperature, from porous silicon and from Er-doped porous silicon, respectively. A different approach, based on Raman scattering in porous silicon, is described to generate radiation at 1.54 mu m. The preliminary experimental results regarding Raman emission in porous silicon samples at 1.54 mu m are also reported. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-2 |
ISSN: | 0013-5194 1350-911X |