Raman emission in porous silicon at 1.54 mu m

There have been many reports regarding visible luminescence and light emission at 1.54 mu m, at room temperature, from porous silicon and from Er-doped porous silicon, respectively. A different approach, based on Raman scattering in porous silicon, is described to generate radiation at 1.54 mu m. Th...

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Bibliographic Details
Published inElectronics letters Vol. 40; no. 19; p. 1
Main Authors Sirleto, L, Raghunatan, V, Rossi, A, Jalali, B
Format Journal Article
LanguageEnglish
Published 01.09.2004
Subjects
Emission
Light emission
Luminescence
Porous silicon
Raman scattering
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Summary:There have been many reports regarding visible luminescence and light emission at 1.54 mu m, at room temperature, from porous silicon and from Er-doped porous silicon, respectively. A different approach, based on Raman scattering in porous silicon, is described to generate radiation at 1.54 mu m. The preliminary experimental results regarding Raman emission in porous silicon samples at 1.54 mu m are also reported.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0013-5194
1350-911X