Ferroelectric (Na sub(1/2)Bi sub(1/2))TiO sub(3) thin films showing photoluminescence properties

Polycrystalline lead-free (Na sub(1/2)Bi sub(1/2))TiO sub(3) (NBT) ferroelectric thin films doped with 1 mol% of rare earth (RE) elements are processed on Pt-terminated silicon substrates using a solution deposition method. The thin films that exhibit single-phase perovskite structure show photolumi...

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Published inApplied physics. A, Materials science & processing Vol. 117; no. 3; pp. 1485 - 1490
Main Authors Zannen, M, Dietze, M, Khemakhem, H, Es-Souni, M
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Deposition
Doped films
Ferroelectric materials
Ferroelectricity
Photoluminescence
Rare earth metals
Thin films
Wavelengths
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Summary:Polycrystalline lead-free (Na sub(1/2)Bi sub(1/2))TiO sub(3) (NBT) ferroelectric thin films doped with 1 mol% of rare earth (RE) elements are processed on Pt-terminated silicon substrates using a solution deposition method. The thin films that exhibit single-phase perovskite structure show photoluminescence properties with highest intensities in the wavelength range between 700 and 850 nm, depending on RE element. The ferroelectric properties of the pure NBT film (P sub(r): 20.5 mu C cm super(-2), E sub(c): 150 kV cm super(-1)) are somewhat decreased for the doped films, which is ascribed to decreasing of the number of Bi lone pairs through the substitution of Bi with RE elements in the perovskite lattice.
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ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-014-8581-2