SiO sub( 2)/AlGaN/GaN MOSHFET with 0.7 mu m gate-length and f sub( max)/f sub( T) of 40/24 GHz

The performance of SiO sub( 2)/AlGaN/GaN MOSHFETs is described in this paper. The C-V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO sub( 2). The devices exhibited gate leakage current of 5 x 10 super( -10) A/mm. The small-signal RF characterization...

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Published inElectronics letters Vol. 41; no. 11; p. 1
Main Authors Bernat, J, Gregusova, D, Heidelberger, G, Fox, A, Marso, M, Lueth, H, Kordos, P
Format Journal Article
LanguageEnglish
Published 01.05.2005
Subjects
Aluminum gallium nitrides
Chemical vapor deposition
Devices
Gallium nitrides
Gates
Leakage current
Silicon dioxide
State of the art
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Summary:The performance of SiO sub( 2)/AlGaN/GaN MOSHFETs is described in this paper. The C-V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO sub( 2). The devices exhibited gate leakage current of 5 x 10 super( -10) A/mm. The small-signal RF characterization of 0.7 mu m gate length devices yielded an f sub( T) of 24 GHz and an f sub( max) of 40 GHz, which are comparable to those typical state-of-the-art AlGaN/GaN HFETs.
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ISSN:0013-5194
1350-911X