Temperature dependence of attenuation of coplanar waveguide on semi-insulating 4H-SiC through 540 degree C

For the first time, the temperature and frequency dependence of the attenuation of a coplanar waveguide on semi-insulating 4H-SiC substrate is reported. At 500 degree C, the attenuation increases by 2 dB/cm at 1 GHz and by 3.25 dB/cm at 50 GHz. This appears to be mainly due to a decrease in the SiC...

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Bibliographic Details
Published inElectronics letters Vol. 39; no. 6; p. 1
Main Authors Ponchak, G E, Schwartz, Z D, Alterovitz, S A, Downey, A N, Freeman, J C
Format Journal Article
LanguageEnglish
Published 01.03.2003
Subjects
Attenuation
Coplanar waveguides
Electrical resistivity
Noise levels
Silicon carbide
Temperature dependence
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Summary:For the first time, the temperature and frequency dependence of the attenuation of a coplanar waveguide on semi-insulating 4H-SiC substrate is reported. At 500 degree C, the attenuation increases by 2 dB/cm at 1 GHz and by 3.25 dB/cm at 50 GHz. This appears to be mainly due to a decrease in the SiC resistivity as the temperature increases.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ObjectType-Feature-2
ISSN:0013-5194
1350-911X