Hydrogen-induced anomalous Hall effect in Codoped ZnO

The electrical transport characteristics and anomalous Hall effect (AHE) were investigated for a hydrogen-injected Co-doped ZnO thin film. Based on the measurements of resistivity and the Hall effect between 5K and 300 K, the existence of Co-H-Co complexes was observed to introduce the AHE and enabl...

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Published inNew journal of physics Vol. 16; pp. 1 - 12
Main Authors Cho, Yong Chan, Lee, Seunghun, Park, Ji Hun, Kim, Won Kyoung, Nahm, Ho-Hyun, Park, Chul Hong, Jeong, Se-Young
Format Journal Article
LanguageEnglish
Published 01.01.2014
Subjects
Asymmetry
Electrical resistivity
Ferromagnetism
Hall effect
Mathematical analysis
Oxides
Thin films
Zinc oxide
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Summary:The electrical transport characteristics and anomalous Hall effect (AHE) were investigated for a hydrogen-injected Co-doped ZnO thin film. Based on the measurements of resistivity and the Hall effect between 5K and 300 K, the existence of Co-H-Co complexes was observed to introduce the AHE and enable the AHE to persist up to room temperature. The observed H-induced AHE originates from the asymmetric scattering of carrier hopping between the localized states driven by ferromagnetic Co-H-Co complexes, and a theoretical study using first-principle calculations supports the experimental results well. This large ferromagnetic response of charge carriers by the hydrogen-induced AHE on semiconducting oxides will stimulate the further investigation of roomtemperature spintronic applications.
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ISSN:1367-2630
1367-2630
DOI:10.1088/1367-2630/16/7/073030