GaSb-based monolithic EP-VCSEL emitting above 2.5 mu m

The first electrically-pumped GaSb-based vertical cavity surface emitting lasers, emitting above 2.5 mu m at room temperature, are reported. This monolithic all-epitaxial structure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-ell active region and an InAsSb/G...

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Bibliographic Details
Published inElectronics letters Vol. 44; no. 23; p. 1
Main Authors Ducanchez, A, Cerutti, L, Grech, P, Genty, F
Format Journal Article
LanguageEnglish
Published 01.11.2008
Subjects
Devices
Emittance
Threshold currents
Tunnel junctions
Vertical cavity surface emission lasers
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Summary:The first electrically-pumped GaSb-based vertical cavity surface emitting lasers, emitting above 2.5 mu m at room temperature, are reported. This monolithic all-epitaxial structure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-ell active region and an InAsSb/GaSb tunnel junction. Devices with a diameter of 30 mu m operate in quasi-CW (1 mu s, 5%) at 2.52 mu m above 300 K. A minimum threshold current of 4.7 kA/cm super( 2) in pulsed operation (100 ns, 0.5%) was obtained at 251 K with these devices.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
content type line 23
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ISSN:0013-5194
1350-911X