Ion beam analysis of Heusler alloy Fe sub(3)Si epitaxially grown on Si(111)

• Published in: Physica status solidi. C Vol. 11; no. 11-12; pp. 1570 - 1573
• Main Authors: Maeda, Yoshihito, Kawakubo, Yuki, Noguchi, Yuya, Narumi, Kazumasa, Sakai, Seiji
• Format: Journal Article
• Language: English
• Published: 01.11.2014
• Subjects: Annealing; Displacements (lattice); Electrical steels; Epitaxial growth; Heusler alloys; Intermetallic compounds; Ion beams; Silicon steels; Silicon substrates; Thermal expansion; Vibration
• DOI: 10.1002/pssc.201400027
• ISSN: 1862-6351

We have investigated atomic ordering of Heusler alloy Fe sub(3)Si(111) epitaxially grown on Si(111) by using ion beam analysis. The total atomic displacement along Si directions was deduced from the minimum yield chi sub(min) and the critical angle psi sub(1/2) for channeling. The total displacement consists of both one-dimensional thermal vibrations computed by the Debye theory and static displacements due to imperfections, lattice mismatch, thermal expansion etc. The atomic displacement increased as the annealing temperature increased from 373 to 573 K. We found that this static displacement came from a difference in thermal expansion between the Fe sub(3)Si film and Si substrates at the anneal temperature and was quenched into room temperature as a remnant displacement. ( copyright 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)