Ion beam analysis of Heusler alloy Fe sub(3)Si epitaxially grown on Si(111)

We have investigated atomic ordering of Heusler alloy Fe sub(3)Si(111) epitaxially grown on Si(111) by using ion beam analysis. The total atomic displacement along Si directions was deduced from the minimum yield chi sub(min) and the critical angle psi sub(1/2) for channeling. The total displacement...

Full description

Saved in:
Bibliographic Details
Published inPhysica status solidi. C Vol. 11; no. 11-12; pp. 1570 - 1573
Main Authors Maeda, Yoshihito, Kawakubo, Yuki, Noguchi, Yuya, Narumi, Kazumasa, Sakai, Seiji
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Annealing
Displacements (lattice)
Electrical steels
Epitaxial growth
Heusler alloys
Intermetallic compounds
Ion beams
Silicon steels
Silicon substrates
Thermal expansion
Vibration
Online AccessGet full text

Cover

More Information
Summary:We have investigated atomic ordering of Heusler alloy Fe sub(3)Si(111) epitaxially grown on Si(111) by using ion beam analysis. The total atomic displacement along Si directions was deduced from the minimum yield chi sub(min) and the critical angle psi sub(1/2) for channeling. The total displacement consists of both one-dimensional thermal vibrations computed by the Debye theory and static displacements due to imperfections, lattice mismatch, thermal expansion etc. The atomic displacement increased as the annealing temperature increased from 373 to 573 K. We found that this static displacement came from a difference in thermal expansion between the Fe sub(3)Si film and Si substrates at the anneal temperature and was quenched into room temperature as a remnant displacement. ( copyright 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-2
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201400027