A Distributed Phase Shifter Using Bi sub(1.5)Zn sub(1.0)Nb sub(1.5)O sub(7)/Ba sub(0.5)Sr sub(0.5)TiO sub(3) Thin Films

We report the demonstration of a monolithic phase shifter employing Bi sub(1.5)Zn sub(1.0)Nb sub(1.5)O sub(7) (BZN)/Ba sub(0.5)Sr sub(0.5)TiO sub(3) (BST) thin films on sapphire substrates. The BST and BZN thin films are successively deposited by radio-frequency magnetron sputtering. A distributed p...

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Bibliographic Details
Published inChinese physics letters Vol. 30; no. 7; pp. 078503 - 1-078503-3
Main Authors LI, Ru-Guan, JIANG, Shu-Wen, GAO, Li-Bin, LI, Yan-Rong
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
Capacitors
Circuits
Deposition
Dielectrics
Microwaves
Noise levels
Phase shifters
Thin films
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Summary:We report the demonstration of a monolithic phase shifter employing Bi sub(1.5)Zn sub(1.0)Nb sub(1.5)O sub(7) (BZN)/Ba sub(0.5)Sr sub(0.5)TiO sub(3) (BST) thin films on sapphire substrates. The BST and BZN thin films are successively deposited by radio-frequency magnetron sputtering. A distributed phase shifter with a coplanar-waveguide transmission line periodically loaded with the BZN/BST capacitors is fabricated. The return loss of the circuit is better than -13 dB from 1 to 12 GHz, and it provides 65[degrees] phase shift with an insertion loss of -4 dB at 12 GHz. The results show that BZN/BST thin films are promising candidate dielectrics for rf/microwave tunable applications.
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/30/7/078503