Investigation of thermal sensitivity and radiation resistance of SiOx metal-dielectric films

In this investigation the composite SiOx films were prepared by the thermal evaporation of a mixture of silicon oxide (SiO2) and Т i powders. The optical transmission of the films in the IR spectral range and their temperature-sensitive properties are studied. By varying the contents of the metal in...

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Published inInfrared physics & technology Vol. 63; pp. 189 - 192
Main Authors Shepeliavyi, P E, Indutnyi, I Z, Dan'ko, V A, Neimash, V B, Povarchuk, VYu
Format Journal Article
LanguageEnglish
Published 01.03.2014
Subjects
Evaporation
Infrared
Infrared radiation
Optical properties
Silicon dioxide
Spectra
Stretching
Vaporizers
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Summary:In this investigation the composite SiOx films were prepared by the thermal evaporation of a mixture of silicon oxide (SiO2) and Т i powders. The optical transmission of the films in the IR spectral range and their temperature-sensitive properties are studied. By varying the contents of the metal in vaporizer and time of evaporation it is possible to obtain SiOx layers with resistance (for monopixel of 0.8 1 mm) from tens kOhms to MOhms and a value of the temperature coefficient of resistance (TCR) is equal to -2.22% K-1. IR spectrum of SiOx film is characterized by a broad absorption band in the range of 8-12 mu m which is associated with the Si-O-Si stretching mode.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1350-4495
DOI:10.1016/j.infrared.2014.01.006