Thermoelectric characteristics of Sb sub(2)Te sub(3) thin films formed viasurfactant-assisted electrodeposition

In this study, Sb sub(2)Te sub(3) films were electrodeposited potentiostatically at room temperature from acidic nitric baths in the presence of a surfactant, cetyltrimethylammonium bromide (CTAB). This resulted in improvements in the surface morphologies of the films. The thus-deposited films also...

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Published inJournal of materials chemistry. A, Materials for energy and sustainability Vol. 1; no. 17; pp. 5430 - 5435
Main Authors Yoo, In-Joon, Song, Youngsup, Chan Lim, Dong, Myung, Nosang V, Lee, Kyu Hyoung, Oh, Minju, Lee, Dongyun, Kim, Yang Do, Kim, Seil, Choa, Yong-Ho, Lee, Joo Yul, Lee, Kyu Hwan, Lim, Jae-Hong
Format Journal Article
LanguageEnglish
Published 01.04.2013
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Summary:In this study, Sb sub(2)Te sub(3) films were electrodeposited potentiostatically at room temperature from acidic nitric baths in the presence of a surfactant, cetyltrimethylammonium bromide (CTAB). This resulted in improvements in the surface morphologies of the films. The thus-deposited films also exhibited better adherence to their substrates. In addition, the carrier transport properties of the Sb sub(2)Te sub(3) films, including their electrical conductivities and Seebeck coefficient values, could be improved by annealing them at 200 degree C. This was due to the formation of Te nanodots in the Sb sub(2)Te sub(3) matrix. The resulting Sb sub(2)Te sub(3) films with Te nanodots 10-20 nm in size and a dispersion density of 11.4 vol% exhibited a high power factor of 716.0 mu W m super(-1) K super(-2), which was about two times higher than that of Sb sub(2)Te sub(3) films that did not contain Te nanodots. The results of the study suggested that the improvements in the thermoelectric characteristics of the films were due to carrier energy filtering at the Te-Sb sub(2)Te sub(3) interface.
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ISSN:2050-7488
2050-7496
DOI:10.1039/c3ta01631e