Centimeter-long Ta sub(3)N sub(5) nanobelts: synthesis, electrical transport, and photoconductive properties

Centimeter-long Ta sub(2)N sub(5) nanobelts were synthesized by a reaction of centimeter-long TaS sub(3) nanobelt templates with flowing NH sub(3) at 800 degree C for 2 h. The nanobelts have cross-sections of about 50 x 100 nm super(2), and lengths up to 0.5 cm. A field effect transistor (FET) made...

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Published inNanotechnology Vol. 24; no. 17; pp. 175701 - 1-7
Main Authors Wu, X C, Tao, Y R, Li, L, Bando, Y, Golberg, D
Format Journal Article
LanguageEnglish
Published 03.05.2013
Subjects
Electrical resistivity
Light irradiation
Nanocomposites
Nanomaterials
Nanostructure
Semiconductors
Temperature
Transport
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Summary:Centimeter-long Ta sub(2)N sub(5) nanobelts were synthesized by a reaction of centimeter-long TaS sub(3) nanobelt templates with flowing NH sub(3) at 800 degree C for 2 h. The nanobelts have cross-sections of about 50 x 100 nm super(2), and lengths up to 0.5 cm. A field effect transistor (FET) made of a single Ta sub(3)N sub(5) nanobelt was fabricated on silica/silicon substrate. The electric transport of the individual nanobelt revealed that the nanobelt is a semiconductor with a room-temperature resistivity of 11.88 Omega m, and can be fitted well with an empirical formula rho = 10831 exp(-T/43.8) - 22.6, where rho is resistivity ( Omega m) and T is absolute temperature (K). The FET showed decent photoconductive performance under light irradiation in the range 250-630 nm. The photocurrent increased by nearly 10 times the dark current under 450 nm light irradiation at an applied voltage of 5.0 V.
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ISSN:0957-4484
DOI:10.1088/0957-4484/24/17/175701