Effect of V(2)O(5) on electrical and microstructural properties of ZnO ceramics

ZnO ceramics with small amounts of V(2)O(5) as a varistor-former ranging from 1-5 mol% were prepared by conventional powder processing route and sintered at 700, 800 and 900 C for 2 h. It was observed that the grain growth behavior in ZnO ceramics was strongly influenced by doping with V(2)O(5). Mor...

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Published inPhysica. B, Condensed matter Vol. 414; pp. 50 - 55
Main Authors Mirzayi, M, Hekmatshoar, M H
Format Journal Article
LanguageEnglish
Published 01.04.2013
Subjects
Ceramics
Condensed matter
Grain boundaries
Microstructure
Nonlinearity
Origins
Sintering (powder metallurgy)
Zinc oxide
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Summary:ZnO ceramics with small amounts of V(2)O(5) as a varistor-former ranging from 1-5 mol% were prepared by conventional powder processing route and sintered at 700, 800 and 900 C for 2 h. It was observed that the grain growth behavior in ZnO ceramics was strongly influenced by doping with V(2)O(5). Morever, lower temperatures about 900 C could be used for sintering. The microstructure of the samples consists of ZnO grains as a main phase and Zn(3)(VO(7))(2) as a secondary phase. All of the prepared ceramics showed characteristic of non-ohmic current-voltage behavior. Non-linear coefficient increased with increase in V(2)O(5) content and sintering temperature. Activation energy of the ceramics lies in the range of 0.071-0.402 eV which decreased with increase in V(2)O(5) content and sintering temperature. The origin of the non-linear electrical behavior was explained by considering the solid state reactions and formation of the potential barriers at grain boundaries.
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ISSN:0921-4526