Design and simulation of hybrid CMOSaSET circuits

Single electron devices have extremely poor driving capabilities so that direct application to practical circuits is as yet almost impossible. A new methodology to overcome this problem is to build hybrid circuits consisting of single electron transistors (SETs) and CMOS interfaces. In this work a r...

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Published inMicroelectronics and reliability Vol. 53; no. 4; pp. 592 - 599
Main Authors Jana, Anindya, Basanta Singh, N, Sing, J K, Sarkar, Subir Kumar
Format Journal Article
LanguageEnglish
Published 01.04.2013
Subjects
Circuits
CMOS
Construction
Devices
Gates (circuits)
Inverters
Logic
Single-electron transistors
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Summary:Single electron devices have extremely poor driving capabilities so that direct application to practical circuits is as yet almost impossible. A new methodology to overcome this problem is to build hybrid circuits consisting of single electron transistors (SETs) and CMOS interfaces. In this work a room temperature operable hybrid CMOSaSET inverter circuit, hybrid CMOSaSET NOR gate and their Voltage Transfer Characteristics (VTCs) are proposed. The MIB compact model for SET device and BSIM4.6.1 model for CMOS are used. The operation of the proposed circuit is verified in Tanner environment. Based on the hybrid CMOSaSET inverter, other logic gates such as NAND, NOR, AND, OR, XOR and XNOR are proposed. All the circuits are verified by means of T-Spice simulation software.
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SourceType-Scholarly Journals-1
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ISSN:0026-2714