Preparation and Transport Properties of Bi sub(2)O sub(2)Se Single Crystals

Bi sub(2)O sub(2)Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters alpha = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measur...

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Bibliographic Details
Published inJournal of electronic materials Vol. 41; no. 9; pp. 2317 - 2321
Main Authors Drasar, C, Ruleova, P, Benes, L, Lostak, P
Format Journal Article
LanguageEnglish
Published 01.09.2012
Subjects
Coefficients
Diffraction
Fermi level
Fermi surfaces
Mathematical models
Resistivity
Single crystals
Temperature gradient
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Summary:Bi sub(2)O sub(2)Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters alpha = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be m sub(ef) = 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons.
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ISSN:0361-5235
DOI:10.1007/s11664-012-2143-1