Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CN sub(x)-multi-wall carbon nanotube hybrid materials

In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI sub(3)), it was possible to form covalent bonds...

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Published inNanotechnology Vol. 23; no. 32; pp. 325601 - 1-9
Main Authors Simmons, T J, Hashim, D P, Zhan, X, Bravo-Sanchez, M, Hahm, M G, Lopez-Luna, E, Linhardt, R J, Ajayan, P M, Navarro-Contreras, H, Vidal, MA
Format Journal Article
LanguageEnglish
Published 17.08.2012
Subjects
Carbon nanotubes
Covalent bonds
Group III-V semiconductors
Multi wall carbon nanotubes
Nanocomposites
Nanomaterials
Nanostructure
Scanning electron microscopy
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Summary:In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI sub(3)), it was possible to form covalent bonds between the Ga super(3+) ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride-carbon nanotube hybrid at room temperature. This functionalization was evaluated by x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0957-4484
DOI:10.1088/0957-4484/23/32/325601