In Situ Interferometry of MOCVD-Grown ZnO for Nucleatlon-Layer-Based Optimization and Nanostructure Formation Monitoring
A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed...
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| Published in | Journal of electronic materials Vol. 40; no. 4; p. 453 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
01.04.2011
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. |
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| AbstractList | A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. |
| Author | Pavlidis, D Biethan, J-P Considine, L |
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| DOI | 10.1007/s11664-011-1515-2 |
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| SubjectTerms | Diffraction Gallium nitrides Interferometry Monitoring Morphology Nanostructure Nucleation Zinc oxide |
| Title | In Situ Interferometry of MOCVD-Grown ZnO for Nucleatlon-Layer-Based Optimization and Nanostructure Formation Monitoring |
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